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[Analysis Case] Evaluation of GaN Crystal Growth by XRD and EBSD

Cross-sectional mapping allows for the evaluation of the crystal growth of GaN.

Gallium nitride (GaN) is used as a material for LEDs and power devices due to its high thermal conductivity and high breakdown voltage characteristics. In the manufacturing process of these products, it is essential to produce high-quality GaN crystals without crystal defects that can affect device characteristics. This document presents a case study evaluating the crystal state of samples in which c-GaN crystals were grown at high speed on c-plane GaN substrates (c-GaN substrates).

• Company：一般財団法人材料科学技術振興財団　MST
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